The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Nov. 16, 2018
Applicant:
Samsung Sdi Co., Ltd., Yongin-si, KR;
Inventors:
Assignee:
Samsung SDI Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/13363 (2006.01); C08J 5/18 (2006.01); G02F 1/1335 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133634 (2013.01); C08J 5/18 (2013.01); G02F 1/13363 (2013.01); G02F 1/133528 (2013.01); C08J 2301/08 (2013.01); C08J 2333/08 (2013.01); C09K 2323/03 (2020.08); C09K 2323/035 (2020.08); G02F 1/133637 (2021.01); G02F 1/134363 (2013.01);
Abstract
Disclosed herein are a retardation film for IPS mode, a polarizing plate including the same, and a liquid crystal display including the same. The retardation film for IPS mode has an out-of-plane retardation at a wavelength of 450 nm (Rth (450) of about −80 nm to 0 nm, an out-of-plane retardation at a wavelength of 550 nm (Rth (550) of about −60 nm to 10 nm, an out-of-plane retardation at a wavelength of 650 nm (Rth (650) of about −60 nm to 10 nm, and an in-plane retardation (Re) at a wavelength of 550 nm of about 0 nm to 10 nm.