The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Jul. 19, 2021
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Zhi-Hong Wang, Miao-Li County, TW;

Hsin-Hung Lin, Miao-Li County, TW;

Chih-Hao Wu, Miao-Li County, TW;

Assignee:

InnoLux Corporation, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
G01T 1/241 (2013.01); G01T 1/247 (2013.01); H01L 27/14614 (2013.01);
Abstract

A radiation sensing device is provided in the present disclosure. The radiation sensing device includes a substrate and a plurality of semiconductor units. The semiconductor units are disposed on the substrate, and at least one of the semiconductor units includes a first gate electrode, an active layer, and a second gate electrode. The active layer is disposed on the first gate electrode, and the second gate electrode is disposed on the active layer. The second gate electrode has a positive bias voltage during a standby mode. The second electrode may be configured to have a positive bias voltage during the standby mode for improving influence on electrical properties of the semiconductor unit after the semiconductor unit is irradiated by radiation.


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