The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Jan. 23, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Naoki Kawazu, Kanagawa, JP;

Keita Sasaki, Kanagawa, JP;

Takumi Oka, Kanagawa, JP;

Mohammad Munirul Haque, San Jose, CA (US);

Nobuhiko Fujimori, Kumamoto, JP;

Makoto Satou, Kanagawa, JP;

Masahiro Baba, Tokyo, JP;

Satoshi Yamamoto, Kanagawa, JP;

Yuichi Motohashi, Tokyo, JP;

Atsushi Suzuki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 15/00 (2006.01); G06K 7/01 (2006.01); H04N 5/378 (2011.01); H04N 5/369 (2011.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01);
U.S. Cl.
CPC ...
G01K 15/005 (2013.01); G06K 7/01 (2013.01); H04N 25/75 (2023.01); H04N 25/79 (2023.01);
Abstract

To obtain an imaging device that can improve temperature detection accuracy. An imaging device of the present disclosure includes a processing unit formed on a first semiconductor substrate and capable of performing predetermined image processing on the basis of image data obtained by an imaging unit, a temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal according to a temperature, and a first pad electrode formed on the first semiconductor substrate and electrically insulated from a circuit formed on the first semiconductor substrate.


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