The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Aug. 24, 2020
Applicant:
Pallidus, Inc., Albany, NY (US);
Inventor:
Mark S. Land, Houston, TX (US);
Assignee:
Pallidus, Inc., Albany, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C01B 32/977 (2017.01); C01B 32/956 (2017.01); C30B 25/02 (2006.01); C30B 29/36 (2006.01); C04B 35/571 (2006.01); C08G 77/20 (2006.01); C08G 77/50 (2006.01); C04B 35/56 (2006.01); C08L 83/04 (2006.01); C04B 35/515 (2006.01); C04B 35/80 (2006.01); C08G 77/12 (2006.01); C08G 77/00 (2006.01);
U.S. Cl.
CPC ...
C01B 32/956 (2017.08); C01B 32/977 (2017.08); C04B 35/515 (2013.01); C04B 35/56 (2013.01); C04B 35/5603 (2013.01); C04B 35/571 (2013.01); C04B 35/80 (2013.01); C08G 77/20 (2013.01); C08G 77/50 (2013.01); C08L 83/04 (2013.01); C23C 14/0635 (2013.01); C30B 25/02 (2013.01); C30B 29/36 (2013.01); C04B 2235/3418 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/3895 (2013.01); C04B 2235/44 (2013.01); C04B 2235/48 (2013.01); C04B 2235/483 (2013.01); C04B 2235/528 (2013.01); C04B 2235/5427 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/94 (2013.01); C04B 2235/96 (2013.01); C08G 77/12 (2013.01); C08G 77/80 (2013.01);
Abstract
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Vapor deposition processes and articles formed by those processes utilizing such high purity SiOC and SiC.