The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Aug. 03, 2020
Applicant:
Sitime Corporation, Santa Clara, CA (US);
Inventors:
Aaron Partridge, Cupertino, CA (US);
Markus Lutz, Mountain View, CA (US);
Pavan Gupta, Belmont, CA (US);
Assignee:
SiTime Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/051 (2006.01); B81C 1/00 (2006.01); H01L 41/113 (2006.01); B81B 7/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00277 (2013.01); B81B 7/007 (2013.01); B81B 7/0035 (2013.01); B81B 7/0058 (2013.01); B81C 1/00269 (2013.01); B81C 1/00301 (2013.01); H01L 23/051 (2013.01); H01L 41/1136 (2013.01); B81B 2201/0271 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0171 (2013.01); B81C 2203/031 (2013.01); B81C 2203/036 (2013.01); B81C 2203/037 (2013.01); B81C 2203/038 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor layer having an opening and a MEMS resonator formed in the opening is disposed between first and second substrates to encapsulate the MEMS resonator. An electrical contact that extends from the opening to an exterior of the MEMS device is formed at least in part within the semiconductor layer and at least in part within the first substrate.