The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Dec. 08, 2020
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
KyungMo Son, Gyeonggi-do, KR;
ShunYoung Yang, Gyeonggi-do, KR;
Assignee:
LG DISPLAY CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 29/786 (2006.01); H01L 27/15 (2006.01); H01L 33/12 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/486 (2013.01); H01L 27/156 (2013.01); H01L 29/7869 (2013.01); H01L 33/12 (2013.01); H01L 33/38 (2013.01); H01L 33/40 (2013.01); H01L 33/62 (2013.01);
Abstract
Embodiments of the present invention relate to a display device in which, in a structure in which an oxide semiconductor thin film transistor is disposed on an upper layer of a low temperature polycrystalline silicon thin film transistor, the hydrogen adsorption layer is disposed on the capacitor electrode located on the driving transistor among low temperature polycrystalline silicon thin film transistors, so that it is possible to prevent the reduction of an S factor due to the re-hydrogenation of the driving transistor in the heat treatment process of the oxide semiconductor thin film transistor.