The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Oct. 21, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Hideyuki Hatta, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Koji Sadamatsu, Tokyo, JP;
Yuichi Nagahisa, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In an SiC-MOSFET with a built-in Schottky diode, a bipolar current may be passed in a second well region formed at a terminal part to reduce the breakdown voltage of the terminal part. In the SiC-MOSFET with the built-in Schottky diode, a source electrode forming non-ohmic connection such as Schottky connection with the second well region is provided on the second well region formed below a gate pad in the terminal part. By the absence of ohmic connection between the second well region and the source electrode, reduction in breakdown voltage is suppressed at the terminal part.