The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Jan. 20, 2021
Raytheon Company, Waltham, MA (US);
Matthew Thomas Dejarld, Wakefield, MA (US);
John P. Bettencourt, Boxford, MA (US);
Adam Lyle Moldawer, Tewksbury, MA (US);
Kenneth A. Wilson, Salem, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A high electron mobility transistor (HEMT) includes a substrate; a source on the substrate; a drain on the substrate spaced from the source; and a gate between the source and the drain, wherein the gate has a stem contacting the substrate, the stem having a source side surface and a drain side surface, wherein a source side angle is defined between the source side surface and an upper planar surface of the substrate and a drain side angle is defined between the drain side surface and the upper planar surface of the substrate, and wherein the source side angle and the drain side angle are asymmetric. Methods for making the HEMT are also disclosed.