The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Mar. 20, 2019
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Satoshi Taniguchi, Kanagawa, JP;

Masashi Yanagita, Kanagawa, JP;

Katsuhiko Takeuchi, Kanagawa, JP;

Shigeru Kanematsu, Kanagawa, JP;

Takanori Higashi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 21/02573 (2013.01); H01L 21/28 (2013.01); H01L 29/45 (2013.01); H01L 29/49 (2013.01); H01L 29/6653 (2013.01); H01L 29/786 (2013.01);
Abstract

[Overview] [Problem to be Solved] To provide a switching transistor and a semiconductor module having lower distortion generated in a signal. [Solution] A switching transistor including: a channel layer including a compound semiconductor and having sheet electron density equal to or higher than 1.7×10cm; a barrier layer formed on the channel layer by using a compound semiconductor that is of a different type from the channel layer; a gate electrode provided on the barrier layer; and a source electrode and a drain electrode provided on the barrier layer with the gate electrode interposed between the source electrode and the drain electrode.


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