The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Nov. 04, 2020
Applicant:
Samsung Display Co., Ltd., Yongin-si, KR;
Inventors:
Chan Woo Yang, Siheung-si, KR;
Hyune Ok Shin, Gwacheon-si, KR;
Chang Oh Jeong, Suwon-si, KR;
Su Kyoung Yang, Yongin-si, KR;
Dong Min Lee, Anyang-si, KR;
Assignee:
Samsung Display Co., Ltd., Yongin-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); C22C 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); C22C 29/12 (2013.01);
Abstract
A thin film transistor including a gate electrode, a semiconductor layer, and source and drain electrodes contacting the semiconductor layer. The source and drain electrodes include a metal oxide having a crystal size in a c-axis direction Lc(002) that ranges from 67 Å or more to 144 Å or less.