The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Jul. 07, 2022
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Inventors:
Shunpei Yamazaki, Tokyo, JP;
Kaoru Hatano, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1362 (2006.01); H01L 27/12 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1333 (2013.01); G02F 1/1343 (2013.01); G02F 1/136213 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); H01L 29/24 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); G02F 1/136227 (2013.01); G02F 1/136231 (2021.01); G02F 2201/50 (2013.01);
Abstract
Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.