The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2023

Filed:

Dec. 11, 2019
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Kazutoshi Tsuyutani, Tokyo, JP;

Masashi Katsumata, Tokyo, JP;

Yoshihiro Suzuki, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/16 (2006.01); H01L 25/16 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 25/16 (2013.01); H01L 2224/08225 (2013.01); H01L 2224/0903 (2013.01); H01L 2224/0913 (2013.01);
Abstract

Disclosed herein is a semiconductor IC-embedded substrate that includes insulating layers, conductor layers, and a semiconductor IC embedded in the insulating layers. The insulating layers includes first and second insulating layers. The conductor layers includes a first conductor layer having a first wiring pattern and a second conductor layer having a second wiring pattern. The semiconductor IC includes a rewiring pattern connected in common to power supply pads. The rewiring pattern is connected to the first wiring pattern via a first opening of the first insulating layer. The first wiring pattern is connected to the second wiring pattern via second openings of the second insulating layer. The first opening is greater in area than each of the second openings.


Find Patent Forward Citations

Loading…