The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Jan. 29, 2020
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventor:
Shogo Inaba, Shiojiri, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01P 15/125 (2006.01); B81C 1/00 (2006.01); B81B 3/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00515 (2013.01); G01P 15/125 (2013.01); B81B 3/0021 (2013.01); B81B 2201/0235 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0353 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0112 (2013.01); B81C 2201/0132 (2013.01); B81C 2201/0142 (2013.01);
Abstract
A structure forming method according to an aspect is a structure forming method for forming a first hole and a second hole having width smaller than width of the first hole in a substrate with dry etching and forming a structure. The structure forming method includes forming an etching mask on the substrate, etching a portion of the etching mask overlapping a first hole forming region where the first hole is formed, etching a portion of the etching mask overlapping a second hole forming region where the second hole is formed, and performing the dry etching of the substrate using the etching mask as a mask.