The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Mar. 31, 2020
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Satoshi Yamaguchi, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
An object is to improve a frame rate in a solid-state imaging element that employs a global shutter method. In the solid-state imaging element, a photoelectric conversion element generates a charge by photoelectric conversion. A charge holding transistor holds the charge. A backward flow prevention transistor generates a potential barrier between the photoelectric conversion element and the charge holding transistor immediately after the charge is transferred from the photoelectric conversion element to the charge holding transistor. A floating diffusion layer accumulates the charge and generates a voltage corresponding to an amount of the charge. A transfer transistor transfers the charge from the charge holding transistor to the floating diffusion layer.