The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Apr. 14, 2021
Applicant:

Akoustis, Inc., Huntersville, NC (US);

Inventors:

Dae Ho Kim, Cornelius, NC (US);

Frank Zhiquang Bi, Mooresville, NC (US);

Mary Winters, Webster, NY (US);

Abhay Saranswarup Kochhar, Charlotte, NC (US);

Emad Mehdizadeh, Charlotte, NC (US);

Rohan W. Houlden, Oak Ridge, NC (US);

Jeffrey B. Shealy, Cornelius, NC (US);

Assignee:

Akoustis, Inc., Huntersville, NC (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 3/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/54 (2006.01); H10N 30/87 (2023.01); H10N 30/88 (2023.01); H10N 30/00 (2023.01); H10N 30/85 (2023.01); H10N 30/02 (2023.01); H10N 30/06 (2023.01); H10N 30/077 (2023.01); H10N 30/086 (2023.01); H03H 9/02 (2006.01); H01L 41/047 (2006.01); H01L 41/053 (2006.01); H01L 41/08 (2006.01); H01L 41/18 (2006.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01);
U.S. Cl.
CPC ...
H03H 3/02 (2013.01); H01L 41/0475 (2013.01); H01L 41/0477 (2013.01); H01L 41/053 (2013.01); H01L 41/081 (2013.01); H01L 41/18 (2013.01); H01L 41/23 (2013.01); H01L 41/29 (2013.01); H01L 41/317 (2013.01); H01L 41/337 (2013.01); H03H 9/02015 (2013.01); H03H 9/02118 (2013.01); H03H 9/0523 (2013.01); H03H 9/105 (2013.01); H03H 9/13 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/177 (2013.01); H03H 9/547 (2013.01); H03H 2003/021 (2013.01); H03H 2003/025 (2013.01); Y10T 29/42 (2015.01);
Abstract

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL's dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.


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