The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Sep. 22, 2022
Applicant:

Skyworks Solutions, Inc., Irvine, CA (US);

Inventors:

Aleksey A. Lyalin, Moorpark, CA (US);

Huiming Xu, Newbury Park, CA (US);

Shayan Farahvash, Kensington, CA (US);

Georgios Palaskas, Portland, OR (US);

Assignee:

Skyworks Solutions, Inc., Irvine, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/24 (2006.01); H03F 1/02 (2006.01); H04B 1/38 (2015.01); H03F 1/56 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 1/0233 (2013.01); H04B 1/38 (2013.01); H03F 2200/105 (2013.01); H03F 2200/451 (2013.01);
Abstract

Power amplifiers with adaptive bias for envelope tracking applications are provided herein. In certain embodiments, an envelope tracking system includes a power amplifier that amplifies a radio frequency (RF) signal and that receives power from a power amplifier supply voltage, and an envelope tracker that controls a voltage level of the power amplifier supply voltage based on an envelope of the RF signal. The power amplifier includes a current mirror having an input that receives a reference current, an output electrically connected to the power amplifier supply voltage, and a node that outputs a gate bias voltage. The power amplifier further includes a field-effect transistor that amplifies the radio frequency signal and a first depletion-mode transistor having a gate connected to the node of the current mirror and a source connected to a gate of the field-effect transistor.


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