The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Feb. 05, 2021
Applicant:
Solaero Technologies Corp., Albuquerque, NM (US);
Inventors:
Arthur Cornfeld, Sandy Springs, GA (US);
Mark A. Stan, Albuquerque, NM (US);
Assignee:
SolAero Technologies Corp., Albuquerque, NM (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/06 (2012.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/06 (2013.01); H01L 31/03046 (2013.01); H01L 31/0693 (2013.01); H01L 31/06875 (2013.01); H01L 31/184 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01);
Abstract
A method of forming a multijunction solar cell that includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another adjacent solar subcell.