The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Mar. 29, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongyub Lee, Yongin-si, KR;

Woong Ko, Seoul, KR;

Changseung Lee, Yongin-si, KR;

Hongkyu Park, Hwaseong-si, KR;

Chanwook Baik, Yongin-si, KR;

Hongseok Lee, Seoul, KR;

Wonjae Joo, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/0288 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 31/02005 (2013.01); H01L 31/02019 (2013.01); H01L 31/0288 (2013.01); H01L 31/022408 (2013.01); H01L 31/105 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01);
Abstract

A meta optical device configured to sense incident light includes a plurality of nanorods each having a shape dimension less than a wavelength of the incident light. Each nanorod includes a first conductivity type semiconductor layer, an intrinsic semiconductor layer, and a second conductivity type semiconductor layer. The meta optical device may separate and sense wavelengths of the incident light.


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