The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Aug. 02, 2019
Applicant:

South China University of Technology, Guangzhou, CN;

Inventors:

Miao Xu, Guangzhou, CN;

Hua Xu, Guangzhou, CN;

Weijing Wu, Guangzhou, CN;

Weifeng Chen, Guangzhou, CN;

Lei Wang, Guangzhou, CN;

Junbiao Peng, Guangzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 21/02266 (2013.01); H01L 21/02581 (2013.01); H01L 21/30604 (2013.01);
Abstract

The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.


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