The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jan. 26, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Sangwoo Sohn, Yongin-si, KR;

Yeonkeon Moon, Yongin-si, KR;

Myounghwa Kim, Yongin-si, KR;

Taesang Kim, Yongin-si, KR;

Geunchul Park, Yongin-si, KR;

Joonseok Park, Yongin-si, KR;

Junhyung Lim, Yongin-si, KR;

Hyelim Choi, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 29/24 (2006.01); H01L 27/12 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 21/823412 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/3244 (2013.01); H01L 29/24 (2013.01); H01L 29/78696 (2013.01); H01L 27/3262 (2013.01);
Abstract

A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.


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