The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Nov. 02, 2020
Applicant:
Attollo Engineering, Llc, Camarillo, CA (US);
Inventors:
Jonathan Geske, Ventura, CA (US);
Andrew Hood, Ventura, CA (US);
Michael MacDougal, Camarillo, CA (US);
Assignee:
Attollo Engineering, LLC, Camarillo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/105 (2006.01); H01L 31/0203 (2014.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1446 (2013.01); H01L 31/0203 (2013.01); H01L 31/02005 (2013.01); H01L 31/02019 (2013.01); H01L 31/035281 (2013.01); H01L 31/105 (2013.01);
Abstract
A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.