The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11676960 B1

Date of Patent:

Jun. 13, 2023

Filed:

Aug. 23, 2020

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Yuichi Onozawa, Matsumoto, JP;

Kota Ohi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Mohsen Ahmadi

Int. Cl.

CPC ...

H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01); H01L 27/07 (2006.01); H01L 21/266 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0629 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 21/26586 (2013.01); H01L 21/8249 (2013.01); H01L 27/0727 (2013.01); H01L 29/0615 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/407 (2013.01); H01L 29/4238 (2013.01); H01L 29/7397 (2013.01); H01L 29/78 (2013.01); H01L 29/0692 (2013.01); H01L 29/0804 (2013.01); H01L 29/6634 (2013.01); H01L 29/7325 (2013.01); H01L 29/8613 (2013.01);

Abstract

A semiconductor device is provided that has a semiconductor substrate, a drift layer of a first conductivity type formed in the semiconductor substrate, a base region of a second conductivity type formed in the semiconductor substrate and above the drift layer, and an accumulation region of the first conductivity type provided between the drift layer and the base region and having an impurity concentration higher than an impurity concentration in the drift layer, wherein the accumulation region has a first accumulation region and a second accumulation region that is formed more shallowly than the first accumulation region is and on a side of a boundary with a region that is different from the accumulation region in a planar view.

Find Patent Forward Citations