The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Oct. 19, 2018
Applicant:

Macom Technology Solutions Holdings, Inc., Lowell, MA (US);

Inventors:

Allen W. Hanson, Cary, NC (US);

Rajesh Baskaran, Dracut, MA (US);

Timothy E. Boles, Tyngsboro, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/78 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7685 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/481 (2013.01); H01L 23/53252 (2013.01); H01L 21/76843 (2013.01);
Abstract

A method involving a barrier for preventing eutectic break-through in through-substrate vias is disclosed. The method generally includes steps (A) to (D). Step (A) may form one or more vias through a substrate. The substrate generally comprises a semiconductor. Step (B) may form a first metal layer. Step (C) may form a barrier layer. The barrier layer generally resides between the vias and the first metal layer. Step (D) may form a second metal layer. The second metal layer may be in electrical contact with the first metal layer through the vias and the barrier layer.


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