The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jul. 22, 2021
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Shinji Tanaka, Tokyo, JP;

Yuichiro Ishii, Tokyo, JP;

Makoto Yabuuchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 29/50 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50 (2013.01); G11C 5/063 (2013.01); G11C 11/419 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A semiconductor device including an SRAM capable of sensing a defective memory cell that does not satisfy desired characteristics is provided. The semiconductor device includes a memory cell, a bit line pair being coupled to the memory cell and having a voltage changed towards a power-supply voltage and a ground voltage in accordance with data of the memory cell in a read mode, and a specifying circuit for specifying a bit line out of the bit line pair. In the semiconductor device, a wiring capacitance is coupled to the bit line specified by the specifying circuit and a voltage of the specified bit line is set to a voltage between a power voltage and a ground voltage in a test mode.


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