The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Jun. 10, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Hideyuki Kataoka, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 7/10 (2006.01); G11C 16/24 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 7/1048 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes: first and second select transistors; first and second select gate lines; first and second interconnects; first and second memory cell transistors; and first and second word lines. In a write operation, after execution of a verify operation, in a period in which the second select transistor is ON, a voltage of the first word line changes from a first voltage to a second voltage and a voltage of the second word line changes from a third voltage applied in the verify operation to a fourth voltage, and after the voltage of the first word line changes to the second voltage and the voltage of the second word line changes to the fourth voltage, a voltage of the second select gate line changes from a fifth voltage to a sixth voltage.


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