The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jan. 13, 2021
Cirrus Logic International Semiconductor Ltd., Edinburgh, GB;
Aleksey S. Khenkin, Austin, TX (US);
John C. Tucker, Austin, TX (US);
John L. Melanson, Austin, TX (US);
Jeffrey A. Weintraub, Austin, TX (US);
Cirrus Logic, Inc., Austin, TX (US);
Abstract
A method for screening a semiconductor device for production of excessive random telegraph sequence (RTS) noise includes measuring noise of the semiconductor device at a first temperature, changing the temperature of the semiconductor device to a second temperature different from the first temperature, measuring noise of the semiconductor device at the second temperature, extracting a characteristic of the measured noise at the first and second temperatures (e.g., standard deviation, HMM output, frequency domain spectrum of time domain noise measurement), making a comparison of the extracted first and second noise characteristics, and making a determination whether the semiconductor device produces excessive RTS noise based on whether the comparison is above a predetermined threshold. Two different bias conditions of the device may be employed rather than, or in addition to, the two different temperatures.