The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

Nov. 29, 2021
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventor:

Katsuhisa Nagao, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G01R 19/00 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
G01R 19/0092 (2013.01); H01L 27/088 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7813 (2013.01); H01L 29/7815 (2013.01);
Abstract

A SiC semiconductor device is provided that is capable of improving the detection accuracy of the current value of a principal current detected by a current sensing portion by restraining heat from escaping from the current sensing portion to a wiring member joined to a sensing-side surface electrode. The semiconductor deviceincludes a SiC semiconductor substrate, a source portionincluding a principal-current-side unit cell, a current sensing portionincluding a sensing-side unit cell, a source-side surface electrodedisposed above the source portion, and a sensing-side surface electrodethat is disposed above the current sensing portionand that has a sensing-side padto which a sensing-side wire is joined, and, in the semiconductor device, the sensing-side unit cellis disposed so as to avoid being positioned directly under the sensing-side pad


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