The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Jul. 12, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jae Bum Han, Suwon-si, KR;

Moon Sung Kim, Anyang-si, KR;

Young Gil Park, Asan-si, KR;

Soo Im Jeong, Hwaseong-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 27/32 (2006.01); G09G 3/3233 (2016.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); H01L 27/323 (2013.01); G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); H01L 27/1222 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/78675 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.


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