The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Mar. 13, 2020
Applicant:

Hitachi Astemo, Ltd., Hitachinaka, JP;

Inventors:

Takeshi Ikuyama, Hitachinaka, JP;

Koichi Yahata, Hitachinaka, JP;

Assignee:

HITACHI ASTEMO, LTD., Hitachinaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/08 (2006.01); H03K 17/082 (2006.01); H02M 1/08 (2006.01); G01K 7/01 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0822 (2013.01); G01K 7/01 (2013.01); H03K 17/687 (2013.01);
Abstract

Even when a large current is intentionally flowed during a high-temperature conduction of a semiconductor element, there is a problem in that an overcurrent state is detected to stop current. In the present invention, an overcurrent detectordetects overcurrent when an input voltage Vin reaches a threshold voltage Vth, and outputs an overcurrent detection signal c to a gate driving unit. On the other hand, when a temperature detection signal a and a current control signal b are input, a transistoris conducted, and the input voltage Vin of the overcurrent detectorbecomes zero. In this case, the input voltage Vin of the overcurrent detectordoes not reach the threshold voltage Vth. Therefore, the output of the drive signal output from the gate driving unitis not stopped. For this reason, a large current can flow in a drain current Ids.


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