The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Sep. 01, 2017
Applicant:

Sicoya Gmbh, Berlin, DE;

Inventors:

Stefan Meister, Berlin, DE;

Hanjo Rhee, Berlin, DE;

Assignee:

SICOYA GMBH, Berlin, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/00 (2013.01); H01S 5/14 (2006.01); G02B 6/42 (2006.01); H01S 5/02 (2006.01); G02B 6/34 (2006.01); G02B 6/12 (2006.01); G02B 6/43 (2006.01); H01S 5/10 (2021.01); H01L 27/00 (2006.01); H01S 5/02251 (2021.01); H01S 5/40 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/143 (2013.01); G02B 6/12002 (2013.01); G02B 6/12004 (2013.01); G02B 6/34 (2013.01); G02B 6/4214 (2013.01); G02B 6/43 (2013.01); H01L 27/00 (2013.01); H01S 5/021 (2013.01); H01S 5/02251 (2021.01); H01S 5/1085 (2013.01); H01S 5/141 (2013.01); H01S 5/026 (2013.01); H01S 5/14 (2013.01); H01S 5/4025 (2013.01);
Abstract

The invention relates to a photonic component () having at least one semiconductor laser amplifier (), which has at least one first mirror surface () for coupling and/or decoupling optical radiation (S). The first mirror surface () of the semiconductor laser amplifier () is coupled to a photonically integrated chip (), wherein the chip () is arranged such that the chip can emit optical radiation (S) from the chip top side (O) thereof in the direction of the first mirror surface () and couple said radiation in the semiconductor laser amplifier (), and wherein the emitting of the radiation (S) away from the chip top side (O) occurs in the direction of the first mirror surface () at an angle of 90°±20°, in particular perpendicular, to the chip top side (O).


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