The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Jan. 28, 2021
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventor:
Mitsuru Soma, Higashimatsuyama, JP;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/765 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/26513 (2013.01); H01L 21/765 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01);
Abstract
In a general aspect, a field-effect transistor (FET) can include a semiconductor region, and a trench disposed in the semiconductor region. The FET can also include a trench gate disposed in an upper portion of the trench in an active region of the FET. The FET can further include a conductive runner disposed in a bottom portion of the trench. The conductive runner can be electrically coupled with a drain terminal of the FET. A portion of the conductive runner can be disposed in the active region below the trench gate.