The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Dec. 10, 2020
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Yuanliang Liu, San Jose, CA (US);

Hui Zang, San Jose, CA (US);

Assignee:

OmniVision Technologies Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 23/745 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14623 (2013.01); H01L 27/14643 (2013.01); H04N 23/745 (2023.01);
Abstract

A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal layer. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the small-photodiode region. The metal layer covers the first back-surface region, at least partially fills the trench, and surrounds the small-photodiode region in the cross-sectional plane. A method for fabricating a flicker-mitigating pixel-array substrate includes forming, on a back surface of a semiconductor substrate, a trench that surrounds a small-photodiode region of the semiconductor substrate in a cross-sectional plane parallel to a first back-surface region of the back surface above the small-photodiode region. The method also includes forming a metal layer on the first back-surface region and in the trench.


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