The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2023
Filed:
Nov. 05, 2020
Applicant:
Innolux Corporation, Miao-Li County, TW;
Inventors:
Chandra Lius, Miao-Li County, TW;
Nai-Fang Hsu, Miao-Li County, TW;
Assignee:
INNOLUX CORPORATION, Miao-Li County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); G06F 3/041 (2006.01); G02F 1/1333 (2006.01); G02F 1/1343 (2006.01); H01L 27/32 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); G02F 1/1368 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/133345 (2013.01); G02F 1/134309 (2013.01); G06F 3/0412 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 27/323 (2013.01); H01L 27/3276 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); G02F 1/13685 (2021.01); G02F 1/133388 (2021.01); H01L 27/3262 (2013.01); H01L 29/4908 (2013.01); H01L 29/78672 (2013.01);
Abstract
A display device is disclosed, which includes: a first substrate; an oxide semiconductor layer disposed on the first substrate; a silicon semiconductor layer disposed on the first substrate; and a capacitor including a first conductive component and a second conductive component, wherein the first conductive component is electrically connected to the oxide semiconductor layer and the second conductive component is electrically connected to the silicon semiconductor layer.