The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Dec. 07, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Eran Sharon, Rishon Lezion, IL;

Idan Alrod, Herzliya, IL;

Alexander Bazarsky, Holon, IL;

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01); H01L 23/00 (2006.01); H01L 27/11582 (2017.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); H01L 24/08 (2013.01); H01L 25/0657 (2013.01); H01L 27/11582 (2013.01); H01L 2224/08145 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06562 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

Technology for two-sided adjacent memory cell interference mitigation in a non-volatile storage system is disclosed. During reading of target memory cells, the storage system applies a suitable magnitude read pass voltage to a first unselected word line adjacent to a target word line to compensate for interference from adjacent cells on the first unselected word line while applying a suitable magnitude read reference voltage to the target word line to compensate for interference from adjacent cells on a second unselected word line on the other side of the target word line. The read pass voltage may compensate for interference due to charge being added to when programming cells on the first unselected word line after programming the target cells. The read reference voltage may compensate for interference due to charge movement near the target cells that results from charge stored in the cells on the second unselected word line.


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