The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

May. 19, 2021
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Daniel Henry Morris, Mountian View, CA (US);

Alok Kumar Mathur, Cupertino, CA (US);

Assignee:

META PLATFORMS TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/417 (2006.01); G11C 5/14 (2006.01); G11C 11/4074 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 5/14 (2013.01); G11C 11/4074 (2013.01); H03K 17/165 (2013.01);
Abstract

System on a Chip (SoC) integrated circuits are configured to reduce Static Random-Access Memory (SRAM) power leakage. For example, SoCs configured to reduce SRAM power leakage may form part of an artificial reality system including at least one head mounted display. Power switching logic on the SoC includes a first power gating transistor that supplies a first, higher voltage to an SRAM array when the SRAM array is in an active state, and a third power gating transistor that isolates a second power gating transistor from the first, higher voltage when the SRAM array is in the active state. The second power gating transistor further supplies a second, lower voltage to the SRAM array when the SRAM array is in a deep retention state, such that SRAM power leakage is reduced in the deep retention state.


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