The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Aug. 26, 2022
Applicant:

Himax Technologies Limited, Tainan, TW;

Inventors:

Yen-Hua Lin, Tainan, TW;

Han-Shui Hsueh, Tainan, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/20 (2006.01);
U.S. Cl.
CPC ...
G09G 3/20 (2013.01); G09G 2310/0275 (2013.01); G09G 2330/028 (2013.01);
Abstract

A multi-level voltage generator includes P-type metal-oxide-semiconductor (PMOS) transistors that generate corresponding positive voltages and a common voltage respectively, each PMOS transistor having a source connected to corresponding generated voltage, and a drain connected to an output node to provide the corresponding generated voltage; N-type metal-oxide-semiconductor (NMOS) transistors that generate corresponding negative voltages and the common voltage respectively, each NMOS transistor having a source connected to corresponding generated voltage, and a drain connected to the output node to provide the corresponding generated voltage; and body-voltage selectors that adaptively select a body voltage for the plurality of PMOS transistors and NMOS transistors respectively, except PMOS transistor associated with a highest positive voltage and NMOS transistor associated with a lowest negative voltage with body and source connected together.


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