The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Sep. 08, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hakgyun Kim, Suwon-si, KR;

Bumsuk Chung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2020.01); G01R 31/28 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G01R 31/2648 (2013.01); G01R 31/2831 (2013.01); G01R 31/2884 (2013.01); G01R 31/2886 (2013.01); H01L 22/34 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of analyzing defects in a semiconductor device includes: collecting current data by applying a test voltage to the semiconductor device; extracting data within a decrease range from the current data; dividing the current data into a first component value and a second component value using the current data and the data extracted from within the decrease range; calculating a first quality index from the first component value satisfying a first function; and calculating a second quality index from the second component value satisfying a second function that is different from the first function.


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