The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Nov. 17, 2016
Applicant:

C3nano Inc., Hayward, CA (US);

Inventors:

Yongxing Hu, Fremont, CA (US);

Xiqiang Yang, Hayward, CA (US);

Ying-Syi Li, Fremont, CA (US);

Alexander Seung-il Hong, Hayward, CA (US);

Melanie Mariko Inouye, Fremont, CA (US);

Yadong Cao, San Jose, CA (US);

Ajay Virkar, San Mateo, CA (US);

Assignee:

C3 Nano, Inc., Hayward, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 18/44 (2006.01); C23C 18/54 (2006.01); C09D 133/06 (2006.01); C23C 18/16 (2006.01); B32B 27/20 (2006.01); B32B 9/04 (2006.01); B32B 27/28 (2006.01); B32B 27/08 (2006.01); B32B 15/04 (2006.01); B32B 15/08 (2006.01); B82Y 30/00 (2011.01); C09D 11/52 (2014.01); C09D 101/02 (2006.01); C09D 139/06 (2006.01); C23C 18/42 (2006.01); H01B 1/22 (2006.01); H01B 13/30 (2006.01); H05K 1/02 (2006.01); H05K 1/09 (2006.01); H05K 3/10 (2006.01); H05K 3/12 (2006.01); B32B 15/01 (2006.01); C09D 105/08 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
C23C 18/44 (2013.01); B32B 9/045 (2013.01); B32B 15/018 (2013.01); B32B 15/04 (2013.01); B32B 15/08 (2013.01); B32B 27/08 (2013.01); B32B 27/20 (2013.01); B32B 27/28 (2013.01); B82Y 30/00 (2013.01); C09D 11/52 (2013.01); C09D 101/02 (2013.01); C09D 133/06 (2013.01); C09D 139/06 (2013.01); C23C 18/1635 (2013.01); C23C 18/1637 (2013.01); C23C 18/42 (2013.01); C23C 18/54 (2013.01); H01B 1/22 (2013.01); H01B 13/30 (2013.01); H05K 1/02 (2013.01); H05K 1/0274 (2013.01); H05K 1/097 (2013.01); H05K 3/10 (2013.01); H05K 3/105 (2013.01); H05K 3/1283 (2013.01); B32B 2255/10 (2013.01); B32B 2255/26 (2013.01); B32B 2262/103 (2013.01); B32B 2262/12 (2013.01); B32B 2307/202 (2013.01); B32B 2307/412 (2013.01); B32B 2307/414 (2013.01); B32B 2457/20 (2013.01); B82Y 20/00 (2013.01); C09D 105/08 (2013.01); H05K 2201/0108 (2013.01); H05K 2201/026 (2013.01); Y10T 428/12444 (2015.01); Y10T 428/12479 (2015.01); Y10T 428/12486 (2015.01); Y10T 428/12889 (2015.01); Y10T 428/12896 (2015.01);
Abstract

Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.


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