The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 06, 2023

Filed:

Jun. 19, 2020
Applicant:

Qorvo Us, Inc., Greensboro, NC (US);

Inventors:

Mickael Renault, San Jose, CA (US);

Jacques Marcel Muyango, Rocklin, CA (US);

Shibajyoti Ghosh Dastider, Roseville, CA (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0067 (2013.01); B81C 1/00349 (2013.01); B81C 1/00444 (2013.01); B81B 2207/11 (2013.01); B81C 1/00158 (2013.01);
Abstract

A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF electrode and a second RF electrode. The microelectromechanical device further comprises one or more electrical contacts disposed below the beam. The one or more electrical contacts comprise a first layer of ruthenium disposed over an oxide layer, a titanium nitride layer disposed on the first layer of ruthenium, and a second layer of ruthenium disposed on the titanium nitride layer.


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