The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Dec. 17, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Wei-Chuan Fang, New Taipei, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 51/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H01L 21/02606 (2013.01); H10K 30/821 (2023.02); H10K 71/10 (2023.02); H10K 85/20 (2023.02); H10K 85/221 (2023.02); H10N 70/011 (2023.02);
Abstract
A memory device includes a bottom electrode, an insulating layer, and a top electrode. The bottom electrode includes a plurality of carbon nanotubes. The insulating layer is disposed over the plurality of carbon nanotubes. The top electrode includes a graphene layer separated from the plurality of carbon nanotubes by the insulating layer.
Fang, Wei-Chuan. (2023). Memory device (U.S. Patent No. 11665986). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11665986
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile