The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

May. 12, 2020
Applicant:

Quantum Motion Technologies Limited, Harrogate, GB;

Inventors:

Michael Fogarty, Harrogate, GB;

Matthew Schormans, Harrogate, GB;

John Morton, Harrogate, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/92 (2006.01);
U.S. Cl.
CPC ...
H10N 60/11 (2023.02); H03K 17/92 (2013.01); H10N 60/128 (2023.02);
Abstract

Processor elements are disclosed herein. A processor element comprises a silicon layer. The processor element further comprises a dielectric layer disposed upon and forming an interface with the silicon layer. The processor element further comprises a conductive via in contact with the dielectric layer, the conductive via comprising a metallic portion having an interface end closest to the dielectric layer and a distal end. A cross-sectional area of the interface end of the metallic portion of the conductive via is less than or equal to 100 nm by 100 nm. In use, the application of a bias potential to the distal end of the conductive via induces a quantum dot at the interface between the dielectric layer and the silicon layer, the quantum dot for confining one or more electrons or holes in the silicon layer. Methods are also described herein.


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