The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jan. 27, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Michael Rizzolo, Delmar, NY (US);

Saba Zare, White Plains, NY (US);

Virat Vasav Mehta, Albany, NY (US);

Eric Raymond Evarts, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

An embodiment of the invention may include a magnetic random-access memory (MRAM) structure and method of making the structure. The MRAM structure may include a magnetic tunnel junction stack. The MRAM structure may include a magnetic liner located between the magnetic tunnel junction stack and a top contact, where the magnetic liner may be a ferromagnetic material. This may enable the magnetic liner to act as an independent variable to balance many of the magnetic parameters in the MTJ film stack in order to achieve zero magnetic field at the MTJ layer.


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