The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Aug. 31, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Takayuki Kashima, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11565 (2013.01); H01L 21/3083 (2013.01); H01L 21/30604 (2013.01); H01L 21/32136 (2013.01); H01L 21/32139 (2013.01);
Abstract

A semiconductor storage device includes a substrate. A stacked body is disposed above the substrate and has an alternately stacked plurality of first insulating layers and plurality of conductive layers. A plurality of columnar portions penetrate the stacked body and include a core layer disposed at a center portion of the columnar portions, a semiconductor layer provided around the core layer, and a memory film disposed around the semiconductor layer. A slit divides an upper conductive layer at an upper portion of the stacked body. In a columnar portion overlapping the slit, the core layer or the memory film protrudes from the semiconductor layer.


Find Patent Forward Citations

Loading…