The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jan. 15, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ingyu Baek, Seoul, KR;

Hyunchul Kim, Seoul, KR;

Jinyong Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H04N 25/771 (2023.01); H01L 49/02 (2006.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H04N 25/771 (2023.01); H01L 27/1463 (2013.01); H01L 27/14609 (2013.01); H01L 27/14636 (2013.01); H01L 28/60 (2013.01); H04N 25/75 (2023.01);
Abstract

An image sensor is provided and includes a photoelectric conversion layer, an integrated circuit layer, and a charge storage layer. The photoelectric conversion layer includes a pixel separation structure defining pixel regions, each including a photoelectric conversion region. The integrated circuit layer read charges from the photoelectric conversion regions. The charge storage layer includes a stacked capacitor for each of the pixel regions. The stacked capacitor includes a lower pad electrode, an intermediate pad electrode, an upper pad electrode, a contact plug connecting the upper pad electrode to the lower pad electrode, a first lower capacitor structure connected between the lower pad electrode and the intermediate pad electrode, and an upper capacitor structure connected between the intermediate pad electrode and the upper pad electrode. The upper capacitor structure is stacked on the lower capacitor structure to partially overlap the lower capacitor structure when viewed in plan view.


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