The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Feb. 17, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Youngsun Oh, Hwaseong-si, KR;

Hyungjin Bae, Suwon-si, KR;

Moosup Lim, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/585 (2023.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H04N 25/585 (2023.01); H04N 25/75 (2023.01); H04N 25/77 (2023.01);
Abstract

An image sensor including a pixel that includes: a first photodiode; a second photodiode having a larger light-receiving area than the first photodiode; a first floating diffusion node accumulating charges of the first photodiode; a second floating diffusion node accumulating charges of the second photodiode; a capacitor accumulating charges overflowing from the first photodiode; a first switch transistor having a first end connected to the first floating diffusion node and a second end connected to the capacitor; and a driving transistor configured to convert the accumulated charges into a pixel signal, the first switch transistor is turned on in a low conversion gain (LCG) mode of a readout section of the first photodiode, and is turned off in a high conversion gain (HCG) mode of the readout section of the first photodiode, and the readout circuit generates image data based on pixel signals from the first and second sections.


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