The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Feb. 13, 2019
Applicant:

The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;

Inventors:

Liang Li, Shijiazhuang, CN;

Xin Lv, Shijiazhuang, CN;

Dongsheng Liang, Shijiazhuang, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/173 (2013.01); H03H 3/02 (2013.01); H03H 2003/021 (2013.01);
Abstract

The application discloses a resonator and a semiconductor device. The resonator includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure successively includes a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top. A cavity is formed between the substrate and the multilayer structure. The cavity is delimited by an upper surface of the substrate and a lower surface of the multilayer structure. A middle region of a part, corresponding to the cavity, of the lower surface of the multilayer structure is a plane. A smooth curved surface for smooth transition is between an edge of the middle region and an edge of the cavity, and the smooth curved surface is between the upper surface of the substrate and the plane.


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