The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Nov. 30, 2020
Applicant:

Nxp B.v., Eindhoven, NL;

Inventors:

Adrianus Buijsman, Nijmegen, NL;

Abdellatif Zanati, Hamburg, DE;

Giorgio Carluccio, Eindhoven, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 3/12 (2006.01); H01P 11/00 (2006.01); H01L 23/66 (2006.01); H01P 5/107 (2006.01); H01Q 1/32 (2006.01); H01Q 1/38 (2006.01); H05K 3/46 (2006.01);
U.S. Cl.
CPC ...
H01P 3/12 (2013.01); H01L 23/66 (2013.01); H01P 3/121 (2013.01); H01P 5/107 (2013.01); H01P 11/002 (2013.01); H01Q 1/3233 (2013.01); H01Q 1/38 (2013.01); H05K 3/4697 (2013.01); H01L 2223/6627 (2013.01); H05K 2201/037 (2013.01); H05K 2201/09009 (2013.01);
Abstract

A method of manufacturing a device is provided. The method includes forming a first cavity in a first substrate with the first cavity having a first depth. A second cavity is formed in a second substrate with the second cavity having a second depth. The first cavity and the second cavity are aligned with each other. The first substrate is affixed to the second substrate to form a waveguide substrate having a hollow waveguide with a first dimension substantially equal to the first depth plus the second depth. A conductive layer is formed on the sidewalls of the hollow waveguide. The waveguide substrate is placed over a packaged semiconductor device, the hollow waveguide aligned with a launcher of the packaged semiconductor device.


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