The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Aug. 01, 2018
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Toshiharu Marui, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT S.A.S., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.