The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Apr. 23, 2021
University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si, KR;
Abstract
The present disclosure discloses an oxide semiconductor thin-film transistor and a method of fabricating the same. According to one embodiment of the present disclosure, the oxide semiconductor thin-film transistor includes a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. Since the gate insulating layer is formed of at least one of zirconium oxide (ZrOx) and lanthanum zirconium oxide (LaZrOx), the electrical characteristics of the oxide semiconductor thin-film transistor may be controlled by the gate insulating layer.