The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jun. 04, 2019
AU Optronics (Kunshan) Co., Ltd., Kunshan, CN;
AU Optronics Corporation, Hsin-Chu, TW;
Chin-Chuan Liu, Hsin-Chu, TW;
Fu-Liang Lin, Hsin-Chu, TW;
AU OPTRONICS (KUSHAN) CO., LTD., Kunshan, CN;
AU OPTRONICS CORPORATION, Hsin-Chu, TW;
Abstract
The invention provides a display device and a method of manufacturing a thin film transistor. The method of manufacturing a thin film transistor comprises: (A) providing a substrate; (B) forming a light shielding layer on the substrate, and patterning the light shielding layer to form a patterned light shielding layer; (C) forming a buffer layer on the substrate; (D) forming a semiconductor layer on the substrate, and patterning the semiconductor layer to form a patterned semiconductor layer; (E) forming an insulating layer on the substrate; and (F) forming a conductive layer on the substrate, and patterning the conductive layer to form a patterned conductive layer; wherein the same mask is used for patterning the light shielding layer and the semiconductor layer. Photoelectric effect of the thin film transistor outside the display region can be effectively avoided, while reducing the number of masks in the production process.